| 摘要 |
PURPOSE:To obtain a semiconductor device, thermal and electrical connection between a semiconductor chip and an electrode substrate of which are stabilized, by joining the planar type Si semiconductor chip and an electrode metal composed of Al or an Al alloy through an Al-Si solder material. CONSTITUTION:An Al-Si solder material 12 is annexed onto the underside of an Si semiconductor chip 4 through a vacuum deposition method. An electrode substrate 1 is heated previously at 400 deg.C in an H2 atmosphere, and an oxide film on the surface is reduced and removed beforehand. The substrate 1 is heated at 590+ or -10 deg.C in the mixed atmosphere of H2 and N2, the chip 4 to which the solder material 12 is affixed is placed to the upper section of the substrate 1, and the solder material 12 is melted, thus joining and fixing the substrate 1 and the chip 4. Accordingly, a semiconductor device, thermal and electrical connection between the chip 4 and the substrate 1 of which are stabilized, is acquired. |
