| 摘要 |
PURPOSE:To adjust the internal resistance of a semiconductor device by applying excess voltage to both ends of the desired semiconductor device to be adjusted to short-circuit the same for thereby making conductive a desired resistor element in a wiring pattern. CONSTITUTION:Excess voltage is applied across a wiring pattern 10 on an interlayer film 15 and a rear surface electrode 17 to break down the interlayer film 15 interposed between both ends of a capacitor element 16 for its short- circuitting. Hereby, the resistor element 12 is made conductive between the wiring patterns 10 and 12. This can increase parallel elements 12...13... in an internal circuit of the title capacitor semiconductor device, for thereby enabling internal resistance to be finely adjusted. Additionally, the resistor element 13 is separated by cutting off the patterns with the irradiation of a laser light. Thus, the parallel resistor elements 13... to the patterns 10, 11 are reduced to assure satisfactory adjustment of the internal resistance. |
