| 摘要 |
<p>PURPOSE:To steepen the non-linearity of a thin film two-terminal element by arranging amorphous silicon group alloy films with large band gap at both sides of an amorphous silicon film, and obtaining non-linear resistance. CONSTITUTION:A protrusion part 1a is formed at an image element electrode consisting of a transparent conductive film. On the protrusion part 1a, the amorphous silicon group alloy film 2, an amorphous silicon hydride film 3, the amorphous silicon group alloy film 4, and a scanning electrode 5 made of aluminum are laminated in order. In such a case, the films 2, 3, and 4 are formed integrally, and also, patterning for them are performed comprehensively. At this time, by forming the band gaps of the films 2 and 4 which form the layers of both sides larger than that of the film 3 which forms an intermediate layer, the non-linearity of the element can be obtained. When a voltage is impressed on the element of a device, a tunnel current flows on the films 2 and 4, and the impact ionization of a carrier is performed, thereby, the non-linearity can be steepend.</p> |
