| 摘要 |
PURPOSE:To eliminate an increase in a leakage current even if the thickness of an N<+> type layer is small with low contacting resistance by mixing Ag powder, at least one of Mo, W and the like, an organic binder, an organic solvent and, as required glass or Pb powder, printing and baking the mixture on the substrate of silicon or the like. CONSTITUTION:Ag powder having a particle size of 1mum or lower, Ni powder having a particle size of 2mum or lower, and PbO-B2O5-SiO2 glass frit are weighed. The mixture is kneaded while adding viscous solution dissolved with 90 parts by weight of alpha-terpineol with 10 parts by weight of ethyl cellulose, thereby preparing a paste electrode material having approx. 200 poise of viscosity. An N<+> type layer 2 having a depth of 0.3-0.5mum is formed by ion implantation on one side surface of a P type silicon substrate 1 as a substrate for a solar battery, and a P<+> type layer 3 having a depth of 1-2mum is formed by aluminum diffusion on the opposite surface. The electrode material is screen printed in a pectinated pattern on the layer 2 of the substrate 1, and in a pattern on the layer 3, dried, thereby forming a light receiving electrode 4 and a back surface electrode 5. This substrate is baked in nitrogen gas which contains 50ppm of oxygen. |
