发明名称 FOERFARANDE FOER FRAMSTAELLNING AV HOEGREN KISELNITRID GENOM DIREKT REAKTION MELLAN ELEMENTAERT KISEL OCH VAETSKEFORMIGA KVAEVE-VAETE-REAKTANTER
摘要 A high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride is prepared by reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: NnH(n+m) wherein: n = 1-4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200-1700 DEG C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product.
申请公布号 SE8803258(L) 申请公布日期 1989.03.16
申请号 SE19880003258 申请日期 1988.09.15
申请人 US ENERGY 发明人 PUGAR E A;MORGAN P E D
分类号 C01B21/068;C01B21/087;(IPC1-7):C01B21/08 主分类号 C01B21/068
代理机构 代理人
主权项
地址