| 摘要 |
<p>PURPOSE:To manufacture a thin film transistor having smaller stray capacity and no dispersion by a method wherein a semiconductor layer is covered with a gate electrode through the intermediary of a gate insulating film while the gate electrode is provided to intersect with a specific source electrode and a drain electrode in the long direction. CONSTITUTION:A source electrode 103 and a drain electrode 102 are provided in parallel with each other at the distance of the channel length of a thin film transistor on an insulating substrate 101. The line width (mum) of these electrodes is represented by y<=(0.6 x +3)(1.2 x +6)/(w+6) where x and w respectively represent the length of substrate in the long direction and the channel width (mum) of the thin film transistor. Furthermore, a semiconductor layer 104 is covered with a gate electrode 106 intersecting with the source electrode 103 and the drain electrode 102 in the long direction through the intermediary of a gate insulating film 105. Thus, even if the gate electrode 106 is pattern-slipped in the arrow 505 or 506 directions, the overlapped space of the source electrode 103 and the drain electrode 102 with the gate electrode 106 can be kept constant. consequently, the pattern-slip of the gate electrode 106 do not have any effect on the stray capacity.</p> |
