| 摘要 |
PURPOSE:To enable to prevent a semiconductor integrated circuit from the parasitic thyristor effect by a method wherein Schottky barrier diodes are provided. CONSTITUTION:An N type epitaxial layer 2 is formed on a P type semiconductor substrate 1, and the epitaxial layer 2 is isolated by a P<+> type isolation region 3 to form an island region 4 isolated according to P-N isolation. A P<+> type resistor region 5 and a double diffusion region 6 of the P type and the N type positioned in close vicinity to the former are formed in the island region 4 on one side. The Schottky barrier diodes 10, 11 are formed on the surface of the island region 4, and the diode is connected to the resistor region 5, or formed on the surface of the island region 12 on another side, and is connected to the double diffusion region 6. The Schottky barrier diode 10 on one side is formed according to evaporated aluminum 14 as shown with the dotted line by exposing a part of the surface of the island region 4 in the neighborhood of the contact hole 13 of the resistor region 5 of the island region 4, and is connected to the resistor region 5 by evaporated aluminum thereof. The Schottky barrier diode 11 on another side is formed in an exposed region 16 according to evaporated aluminum 17 by providing an N<+> type contact diffusion region 15 and the exposed region 16 in another independent island region 12. |
