| 摘要 |
PURPOSE:To obtain a reverse conductive type semiconductor device which has high reliability by dividing a semiconductor element surrounded by a diode by many electrodes, thereby preventing the deterioration in the characteristics due to irregular stress distribution in the pressure contacting surface of a metal stamp with the element. CONSTITUTION:A reverse conductive type GTO is composed of an anti-parallel diode region B having an N type layer 2 and a P type layer 3 to a GTO region A having four laminated semiconductor layers of a P type emitter layer 1, an N type base layer 2, a P type base layer 3 and an N type emitter layer 4, and a groove 7 is formed at a P' type base layer 3 between the region A and the region B. Many cathode elements 6 are radially arranged in the gate electrode 5 (r1 is the radius of the region A, r2 is the radius of the inner periphery of the region B, and R is the radius of the outer periphery). This GTOI is pressure contacted through metal 8 such as Mo, or W by a metal stamp 9 such as Cu. When the pressure at the pressure contacting time is represented by P, the pressure contacting surface between the reverse conductive type GTOI and the metal 8 induces a stress distribution. The r1 is decided to Pr1<=3Po, where Po represents the pressure at the center of the GTOI, Pr1 is the pressure of x-r1, and the PR is the pressure of the x=R. In this manner, the deterioration in the characteristics of the GTO region upon pressure contacting is prevented, thereby eliminating the influence of the gate current flowed to the diode region. |
