发明名称 |
Manufacturing process for a monolithic semiconductor device having multiple epitaxial layers with a low concentration of impurities. |
摘要 |
<p>The invention concerns a process for manufacturing a monolithic integrated semiconductor device comprising an integrated control circuit and high-voltage power components. It solves the problem of undesired phantom layers created by out diffusion of the type-P dopant present in the insulation region of the substrate. Between a first epitaxial layer and a third epitaxial layer of the device, a second epitaxial layer is grown of predetermined thickness, and a first region for the insulation of the integrated control circuit is formed in the first epitaxial layer and at least a second region for the buried layer is formed in the second epitaxial layer.</p> |
申请公布号 |
EP0307032(A2) |
申请公布日期 |
1989.03.15 |
申请号 |
EP19880201845 |
申请日期 |
1988.08.30 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.P.A. |
发明人 |
MUSUMECI, SALVATORE;ZAMBRANO, RAFFAELE |
分类号 |
H01L21/331;H01L21/74;H01L21/761;H01L21/8222;H01L27/082;H01L29/73;H01L29/732 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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