| 摘要 |
PURPOSE:To improve the degree of integration by mixing and arranging a memory cell, cell nodes of which are formed by shallow diffusion layers, and a memory cell, cell nodes of which are shaped by deep diffusion layers, so that the cell nodes for the latter memory cell may not be adjacent to each other across field oxide. CONSTITUTION:Two kinds of memory cells, the depth of diffusion layers of which differs, are mixed and disposed, and a memory cell 22 and a memory cell 23 use a contact CT with a bit line in common. A memory cell 21 is arranged adjacently to the memory cell 22 through a field oxide. Likewise, a memory cell 24 is disposed adjacently to the memory cell 23 through a field oxide. The kinds of the memory cells 21, 22 or the memory cells 23, 24 arranged adjacently through the field oxide are made to differ. The kinds of the memory cells 22, 23 employing the contact CT with the bit line in common are also made to differ. Accordingly, the memory cells are disposed adjacently even in sections through the field oxide, thus improving the degree of integration by utilizing the characteristics of a small cell area. |
