| 摘要 |
PURPOSE:To manufacture an end emission type LED without adopting a mesa structure by a method wherein a semiinsulating semiconductor layer as a current block layer is provided on the upper part of an active layer. CONSTITUTION:The title end emission type LED is composed of an n type InP semiconductor substrate 1, an n type InP buffer layer 2, an n type or p type true InGaAs active layer 3, p type InP clad layers 4, 6, a semiinsulating current block layer 5, a p type InGaAsP contact layer 7, an n side electrode 8 and a p side electrode 9. The semiinsulating semiconductor layer 5 as a corrent block layer is provided so that carrier may be efficiently implanted in the active layer 3 to prevent leakage current from being set up. Consequently, the optical coupling efficiency can be satisfactorily improved. Furthermore, a depletion layer extends over all region of the semiconductor layer 5 so that the device may be assured of high output and high speed without adopting a mesa structure. |
