发明名称 |
Growth rate monitor for molecular beam epitaxy. |
摘要 |
<p>A light source (20) with appropriate optics focusses light on the wafer surface (14) during deposition, while a nearby collector (30) is biased to collect photoemitted electrons from the growing surface. A pico ammeter (40) can be used to convert the small oscillatory current detected to a substantial voltage signal which can be recorded or processed by computer or other suitable device. The light must contain wavelengths at energies close to or greater than the energy of the photoemission threshold. The detected photoemitted electron signal has an oscillatory component occurring due to the growth of epitaxial layers. This oscillation has frequency 1/ tau , where tau is the monolayer accumulation time.</p> |
申请公布号 |
EP0307096(A2) |
申请公布日期 |
1989.03.15 |
申请号 |
EP19880307595 |
申请日期 |
1988.08.16 |
申请人 |
VARIAN ASSOCIATES, INC. |
发明人 |
ECKSTEIN, JAMES N.;WENG, SHANG-LIN;WEBB, CHRISTOPHER |
分类号 |
H01L21/203;C30B23/02;C30B23/08;G01N21/00;G01N23/227 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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