| 摘要 |
PURPOSE:To manufacture the title vertical field effect transistor in high reliability causing no trouble to the high temperature reverse bias test by slightly overlapping a gate electrode with a source electrode. CONSTITUTION:The title vertical field effect transistor is composed of an N type silicon substrate 1, a well base region 2 and a base region 3 formed in the substrate 1, a source region 4, a polycrystalline silicon gate electrode 5, an interlayer insulating film 6 covering a part of the source region 4 and the surface of the polycrystalline silicon gate electrode 5 and a source aluminum electrode 7 in contact with a part of the source region 4 and removed from the gate electrode 5 excluding the overlapped part W with the insulating part. Through these procedures, the high speed switching characteristics can be displayed neither exercising the high temperature reverse bias life testing characteristics nor raising the leakage current between the source and the drain regions at high voltage by forming a bit of overlapped part W(around 1mum) of the source electrode 7 at the end of the gate electrode 5. |
