发明名称 |
Method for generating resist structures |
摘要 |
In generating resist structures according to bilayer technology a series of requirements is made of silicon-containing positive resists. The new method is intended to ensure, inter alia, the profile retention respectively the ability of the resist structures to maintain precise dimensions. According to the invention vinyl phenol-vinyl silane copolymers are used as resist materials.
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申请公布号 |
US4812200(A) |
申请公布日期 |
1989.03.14 |
申请号 |
US19880166436 |
申请日期 |
1988.03.10 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BIRKLE, SIEGFRIED;SEZI, RECAI;FEUCHT, HANS-DIETER;LEUSCHNER, RAINER |
分类号 |
G03C1/72;G03F7/022;G03F7/039;G03F7/075;H01L21/312;(IPC1-7):B44C1/22;B29C37/00;C03C15/00;C03C25/06 |
主分类号 |
G03C1/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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