| 摘要 |
PURPOSE:To obtain an electrostrictive effect element having small ageing change rate of a resistance value and high linearity by forming a resistor without employing an adhesive for the element by a sputtering method or the like. CONSTITUTION:An internal electrode layer 2 and a piezoelectric ceramic layer 1 are alternately laminated to form a laminate 3. An SiO2 film 6 is formed 1mum thick by RF sputtering on a side face not formed with an external electrode 5 of the side faces of the laminate 3, and the end of the internal electrode exposed on the side face is insulated. A resistor 7 made of tuntalum nitride is formed by a sputtering method with a metal mask on the film 6. Resistor electrodes 8 are formed by a sputtering method of chromium-gold on both ends of the resistor 7. |
