| 摘要 |
PURPOSE:To reduce the stray capacity of wirings by forming grooves of a predetermined shape on the main face of a semiconductor substrate, then thermally oxidizing the substrate, filling an oxide film in the grooves, and forming wirings on the oxide film. CONSTITUTION:Three rows of grooves 2 are dug by etching at predetermined positions of a silicon substrate 1 having a main face. Then, the main face of the substrate 1 including the grooves 2 is thermally oxidized to form an oxide film 3. Thereafter, the surface layer is removed by etching to expose the substrate 1, and a buried oxide film 4 is formed. Eventually, after a film which becomes a wiring layer made of aluminum or the like is formed on the film 4 and the whole main face of the substrate 1, it is patterned by a photoengraving technique or the like, thereby forming a wiring 5. |
