| 摘要 |
PURPOSE:To easily form plural sputtered thin films on a substrate for vapor deposition at exact thicknesses by using a target on which materials for thin films are deposited by physical evaporation to required thicknesses in order reverse from order of the sputtered thin films at the time of forming the plural layers of the thin films on the substrate of a method for vapor deposition by sputtering. CONSTITUTION:The target constituted by depositing BaO 2, Y2O3 3 and Cu 4 in this order, which is reverse from order of the materials deposited by evaporation on the substrate 6 for vapor deposition consisting of ceramics such as glass, alumina or berylia to the prescribed thicknesses on the surface of the substrate 1 made of a Cu-base alloy by the physical method such as vapor deposition by sputtering or ion plating is used as the target to be used for forming the thin films of Cu 7, Y2O3 8, and BaO 9 at the respective specific thicknesses on the surface of the above-mentioned substrate 6. The thin vapor deposited films of the plural metals or compds. are formed at the exact thicknesses on the substrate 6. |
