| 摘要 |
The invention relates to a charge-coupled device with bulk transport (PCCD or BCCD), in which the lateral boundary is formed by zones (6) of the same type as and having a lower concentration than the charge transport channel. The potential barriers necessary for the lateral bounding are induced in these channel-bounding zones via the clock electrodes (7) of the CCD. As compared with conventional CCD's with bulk transport, in which the lateral boundary comprises a cut-off pn junction, a CCD of the type suggested here has the important advantage of low dynamic leakage currents.
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