| 摘要 |
PURPOSE:To prevent hot electrons from flowing to a gate oxide film by increas ing the effective length of a channel region by a groove formed on a semiconduc tor substrate, thereby weakening the intensity of an electric field. CONSTITUTION:When a p-type semiconductor substrate 1 and a source electrode 8 are grounded and a positive voltage of at least a predetermined value is applied to a gate electrode 10 and a drain electrode 9, electrons flow from a source region 5 to a drain region 6 in a channel region 7. Here, the region 7 is formed near a boundary between a gate oxide film 3 and the substrate 1, but since a groove 11 is provided, the effective length of the region 7 is increased. Thus, the intensity of an electric field is weakened, and since maxi mum energy of obtaining the electrons is reduced, hot electrons are reduced. |
