发明名称 AMORPHOUS SILICON X-RAY SENSOR
摘要 PURPOSE:To eliminate the shadow of the titled sensor by laminating an electrode layer and an electromotive force layer and patterning one electrode layer so that a detection part as a light collection field and a lead part for leading the output signal of the detection part to an X-ray photographic part are separated. CONSTITUTION:A polyester film which is larger than the X-ray photographic part is used as a polymer substrate and the electromotive force layer is provided. Then, a stainless mask for forming one lead-out electrode 7 is formed at the one lengthwise end part of the substrate 1, a P-type amorphous silicon film is deposited by a glow discharge vapor-phase cracking method, and then an I amorphous silicon film, etc., are deposited to obtain a pin type electromotive force layer 3. Then when a detection part S is provided to the center part of the electromotive force layer, an insulating resin layer 4 is provided along the contour part of the pattern including a lead part L. Then this is compared with an X-ray sensor by a conventional method and then there is no sensor shade corresponding to a transmission spot, thereby confirming that a sufficient function is obtained.
申请公布号 JPS6468685(A) 申请公布日期 1989.03.14
申请号 JP19870224172 申请日期 1987.09.09
申请人 TEIJIN LTD 发明人 OKANIWA HIROSHI;NAKATANI KENJI;SUZUKI KAZUTOMI
分类号 G01T1/20;H01L31/00;H01L31/09 主分类号 G01T1/20
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