| 摘要 |
PURPOSE:To obtain a device having a P-i-N junction by a method wherein a molecular sieve or zeolite with an effective diameter in a predetermined range is utilized to adsorb and remove oxide gas or carbide gas with a molecular diameter not larger than 4.5Angstrom , thereby providing an i-layer. CONSTITUTION:A molecular sieve or zeolite represented by a molecular formula of Nan(AlO2)(SiO2)27-30 H2O or (K4Zn4) (AlO2)(SiO2).27-30 H2O and having an effective diameter of 2.9-4.65Angstrom is used while being cooled down to a range from the room temperature to -100 deg.C to adsorb impurities of oxide gas (H2O, O2, CO2, etc.) up to a level not larger than 0.03ppm or impurities of gas (CH4, C2H2...) represented by CmHn (m>=2) up to a level not larger than 0.5ppm. Thus, a hydride or halide (with an effective molecular diameter not less than 4.8Angstrom ) of Si or Ge is refined. Reaction gas thus refined can be used to form an intrinsic or substantially intrinsic semiconductor layer by a plasma vapor method. The resultant P-i-N junction can provide a high intrinsic conversion efficiency. |
