发明名称 PHOTOELECTRIC SURFACE
摘要 <p>PURPOSE:To obtain a photoelectric surface having sufficiently high photoelectric surface sensitivity for polycrystals and maintaining it for a long time by making the ratio of the alkali metal made of cesium or rubidium against semi-metals larger than that of another alkali metal. CONSTITUTION:One or two kinds selected from cesium and rubidium and another alkali metal are introduced directly or via an intermediate layer 3 on polycrystals of CsI/Na or the like until the photoelectric current is sufficiently saturated, then one kind or two or more kinds of semi-metals 5 are deposited to form a photoelectric surface 6. The ratio of the alkali metal 4 made of cesium or rubidium or their combination against the semi-metals 5 is made larger than that of another alkali metal. The long-life photoelectric surface having high photoelectric surface sensitivity and maintaining it for a long time can be obtained.</p>
申请公布号 JPS6467839(A) 申请公布日期 1989.03.14
申请号 JP19870223880 申请日期 1987.09.09
申请人 TOSHIBA CORP 发明人 ARAMAKI NARIMITSU
分类号 H01J29/38;H01J1/34;H01J31/50 主分类号 H01J29/38
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