Preparation of Group II metal alkyls

摘要

PCT No. PCT/GB86/00197 Sec. 371 Date Jan. 27, 1987 Sec. 102(e) Date Jan. 27, 1987 PCT Filed Apr. 9, 1986 PCT Pub. No. WO86/06071 PCT Pub. Date Oct. 23, 1986.A method of preparing high purity dimethyl cadmium or dimethyl zinc suitable for use in the deposition of Group II-VI epitaxial layers, which consists of forming an adduct of the metal alkyl with a non-chelating tertiary amine containing at least two tertiary amino groups per amine molecule, and subsequently dissociating the adduct to liberate the metal alkyl as a vapor. The adducts formed during the preparative method are found to dissociate readily on heating and yet are substantially involatile and so do not contaminate the liberated metal alkyl. A preferred amine suitable for use in the preparative method is 4,4' bipyridyl.