发明名称 Method of forming a multilevel interconnection device
摘要 A method of fabricating a high density electrical interconnection member by forming a composite interconnection from metallic conductors on cured liquid polymer resin on substrate. The resin is cured at an elevated temperature to form a solid dielectric layer. Successive metallic and dielectric layers form an interconnection subassembly with the coefficient of thermal expansion of the substrate being less than the subassembly. The temperature of the subassembly is lowered placing it in tension. A support member is adhered to the exposed surface of the subassembly and the substrate removed. Multiple subassemblies can be joined together physically and electricaly to form a complex device for interconnecting a plurality of integrated circuit chips for high performance computer applications.
申请公布号 US4812191(A) 申请公布日期 1989.03.14
申请号 US19870055794 申请日期 1987.06.01
申请人 DIGITAL EQUIPMENT CORPORATION 发明人 HO, CHUNG W.;MIN, B. Y.
分类号 H01L21/48;H01L23/538;H05K3/00;H05K3/20;H05K3/46;(IPC1-7):B32B31/00;B44C3/02 主分类号 H01L21/48
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