发明名称 Triac desensitized with respect to re-striking risks on switching across a reactive load
摘要 PCT No. PCT/FR86/00238 Sec. 371 Date Mar. 18, 1987 Sec. 102(e) Date Mar. 18, 1987 PCT Filed Jul. 4, 1986 PCT Pub. No. WO87/00971 PCT Pub. Date Feb. 12, 1987.The invention provides a triac whose resistance to untimely striking in the presence of steep voltage fronts is increased. For this, a part of the gate electrode is provided above a five layer structure, a part above a four layer structure and finally a small part above a three layer structure.
申请公布号 US4812893(A) 申请公布日期 1989.03.14
申请号 US19870043557 申请日期 1987.03.18
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 BACUVIER, PIERRE
分类号 H01L29/747;(IPC1-7):H01L29/747 主分类号 H01L29/747
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