| 摘要 |
<p>PURPOSE:To obtain a voltage-dependent non-linear resistor, which has the low melting point, in which an ohmic contact is formed, resistance of which is lowered and which has a resistance value according to a design value by using a base metal as a metal injected to porous layers and porous bodies shaping an internal electrode and an external electrode. CONSTITUTION:Internal electrodes are printed onto green sheets 1b-1e by paste in which carbon and varnish are mixed to ZnO sintered powder, and the green sheets are laminated so that the end sections of paste 2 are alternated, and contact-bonded, and baked at 1000-1200 deg.C in air, thus acquiring semiconductor ceramics 4 with strati form porous layers 3. Paste composed of Ni3B glass frit and an organic vehicle is applied and baked onto both sides of the semiconductor ceramics 4, and porous exter nal electrode sections 5 are shaped. A unit 6 is deaerated under a vacuum, and dipped into a melt in which a base metal consisting of 80mol% Pb and 20mol% Zn is molted at 450 deg.C, a base metallic solution is injected to the porous layers 3 and 5, and the unit is pulled up, and returned to atmospheric pressure. The base metal injected to the porous layers does not flow out, and the uniform internal electrodes are formed up to innermost sections, thus obtaining a resistance value according to a design value. A molten metal may be melted at 700 deg.C or less.</p> |
