| 摘要 |
PURPOSE:To improve a material in a utilization factor by a method wherein a bump is formed in such a manner that an electroplating is performed using a bump forming mask and a metallic layer is formed only on a bump forming region of a non-defective semiconductor device. CONSTITUTION:Semiconductor device elements formed on a semiconductor wafer 1 are made to be individually tested so as to find each of the semiconductor device elements defective or non-defective. Next, a positive-type resist film 5 is formed on the wafer 1. Then, a first mask 7 provided with transparent regions corresponding to the bump forming regions of the whole semiconductor device elements formed on the wafer 1 and a second mask 8, which is provided with transparent regions that correspond to the whole face of the non-defective semiconductor device elements, consisting of a liquid crystal shutter or the like are provided. The exposure and the development are performed using these masks 7 and 8 overlapped with each other so as to form a bump forming resist mask 9 provided with opening corresponding to the bump forming regions of the nob-detective semiconductor device elements. By the use of the mask 9, only the above openings are plated through an electroplating method so as to form a bump 6 and the mask 9 and a metal 4 are removed. |
