| 摘要 |
PURPOSE:To scale down a semiconductor chip, and to improve the degree of integration by forming input/output buffer blocks having maximum driving capacity to an L shape in an integrated circuit device having a logic section block formed at a central section on the semiconductor chip and a plurality of input/output buffer blocks having the same function and different driving capacity on the chip of the outer circumference of the logical section block. CONSTITUTION:Input/output buffer blocks 6, 7 respectively have the same driving capacity as input/output buffer blocks 3b, but the blocks 6, 7 are formed to an L shape. Consequently, the depth of an input/output buffer block array shaped along one side of a semiconductor chip 1 can be reduced. Accordingly, a logic section block 2a on the inside can be made wider than conventional logic section blocks 2, thus diminishing a dead space, then improving the degree of integration. That is, a semiconductor chip can be scaled down to an integrated circuit device in the Same LSI scale. |
