| 摘要 |
PURPOSE: To increase integration density, and reduce the base-collector capacity, and further, reduce the parasitic resistance, by making the rectifier into such a structure, that the width of the base region of a lateral NPN device is drastically reduced and the volume of the region of the storage charge under the base is reduced. CONSTITUTION: A transistor T2 is a lateral PNP device, a transistor T5 is a lateral NPN device, a transistor T3 is a vertical NPN transistor, transistors T1 and T4 are parasitic board PNP transistors, and the width 47 of the lateral NPN base is drastically narrow, since it is self-aligned. A small-sized structure is made and the width of the NPN base is greatly reduced by an emitter and the right end of a base region being self-aligned with the left end of an injector. Because the storage charge under the lateral NPN base decides the switching time, the width is made as narrow as possible. |
