发明名称 Semiconductor device for protection against overvoltages
摘要 The invention relates to a device for protection against overvoltages. The device is formed from at least two bidirectional elements each consisting of a first layer C0 of a first type of conductivity, of a second layer C1 of a second type of conductivity and of a third layer C2 of the first type of conductivity so as to form two symmetric junctions. According to the invention, the first layer C0 constitutes a substrate common to all the bidirectional elements, insulating means 21 produced over a thickness greater than that of the other two layers C1, C2 delimiting the elements. The device is used for the protection of positively or negatively polarised lines. <IMAGE>
申请公布号 FR2620271(A1) 申请公布日期 1989.03.10
申请号 FR19870012444 申请日期 1987.09.08
申请人 THOMSON SEMICONDUCTEURS 发明人 JEAN-PAUL MONTAUT ET FRANCOIS POULIN;POULIN FRANCOIS
分类号 H01L27/02;H01L27/102;H01L29/861;H02H9/04 主分类号 H01L27/02
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