发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To increase discharge resistance for decreasing stress applied to a semiconductor element by static discharge and to prevent breakdown of the semiconductor element, by forming a high resistance coat film at least on the tip ends of lead terminals. CONSTITUTION:A lead terminal 2 consists of a lead material 2 basically composed of Fe-Ni alloy or Cu alloy, an Ni plated film 4 covering the surface of the lead material 3, a solder film 5 formed on the Ni plated film 4 and a high resistance film 6 of a carbon paste material deposited to cover the solder film 5 at the tip end of the lead terminal 2. Since the surface of the tip end of the lead terminal 2 is covered with the high resistance film 5, a discharge passage of static charge charged within the lead terminal 2 is defined following the course from the high resistance film to a spark discharge space and to the grounding system. Accordingly, higher discharge resistance can be obtained than by prior arts.</p>
申请公布号 JPS6464246(A) 申请公布日期 1989.03.10
申请号 JP19870221510 申请日期 1987.09.03
申请人 NEC CORP 发明人 YAMAZAKI TAKASHI
分类号 C23C28/00;H01L23/00;H01L23/50;H05K1/02;H05K3/34 主分类号 C23C28/00
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