| 摘要 |
PURPOSE:To effectively inject carrier into an active layer, by providing a carrier injection layer constituted of quantum well or superlattice having a quantum level energy resonant with the excitation level energy of a semiconductor constituting quantum well or superlattice layer. CONSTITUTION:Electron injected from an N-electrode 1 by a forward bias travels an active layer 5 through an N-type ohmic layer 2, an N-type clad layer 3, and a clad layer superlattice 4 for electron injection, and recombines, while emitting light in the active layer 5, with positive hole injected in the same manner from a P-electrode side. The emitted light is amplified in stimulated emission process in a laser resonator arranged by the same method as the prior art, and laser oscillation generates. At the time of injection from the superlattice layer 4 to the active layer 5, the base quantum level is occupied in the superlattice. When the base quantum level is resonant with the higher excitation level (n=2) of the active layer quantum well, the electron energy transfer to the base quantum level of the active layer quantum well occurs by the quantum mechanical transition process, so that it is done with high speed and high efficiency. |
