| 摘要 |
A process for growing a silicon crystal 32 in the form of a strip of dendritic structure, from molten silicon 31 arranged in a crucible 30 contained in an electrically heated lower holder 28 and housed in a gas chamber 18, comprises purging the gas chamber 18 with argon, which is performed a number of times, by evacuating the gas chamber 18 and refilling it with argon, evacuating and refilling the gas chamber 18 with helium, and then introducing argon with approximately 3 % of hydrogen, and replacing helium with argon and hydrogen before beginning the formation of the silicon crystal 32 in the form of a strip of dendritic structure. <IMAGE>
|
