| 摘要 |
PURPOSE:To have sufficient thickness and to improve manufacture effectiveness with the merits of each CVD method and molecular beam epitaxy method made at the most by composing the captioned material with a first superconductive layer belonging to a specific system and is formed by a molecular beam epitaxy method, and a second superconductive layer belonging to a specific system and is formed by a chemical evaporation method on the first superconductive layer. CONSTITUTION:A high temperature superconductive material 2 belonging to an oxide system and having two-layer structure is formed on the substrate 1 surface. A first superconductive layer 2a is formed by using a molecular beam epitaxy device in the first process, and a second superconductive layer 2b is formed by using a CVD device in the second process. Forming film by a molecular beam epitaxy method makes it possible to improve critical electric current density. An evaporation source used in the process can be obtained by temporarily burning and sintering etc., a material including elements composing an oxide superconductor, or a mixed material etc., of the material and an oxide superconductor. A conductor belonging to an A-B-C-D system is used as an oxide superconductor, for instance, in the case of an oxide superconductor belonging to a Y-Ba-Cu-O system, the following formula Y:Ba:Cu:O =1:2:3:(7-delta) is applied, and delta is made to have the range of 0<=delta<=5. |
