| 摘要 |
An improved target (18, 44, 56, 66, 76 or 102) for use in a laser pulse (12 or 104) induced plasma X-ray lithography system (10 or 100) has a plurality of small holes (74 or 90) fabricated through a base (68 or 84) against which the laser beam (121 or 104) is focused. A film (70 or 86) covers each hole (74 or 90) and a thin layer of metal target material (72 or 88) is placed on the film (70 or 86). The thickness of the metal material (72 or 88) is selected to be sufficient to allow the complete ablation of the material during the existence of the laser beam (12 or 104) inducing the X-ray emitting plasma (20). In this manner, a minimal amount of debris (30) will be generated. The angle of the plane of the target (18, 44, 76 or 102) relative to the mask (24 or 110) plane and the angle of incidence of the laser beam (12 or 104) relative to the normal line to the target (18, 44, 76 or 102) are selected so that both the X-ray mask (24 or 110) and the laser beam (12 or 104) optical elements (113) are positioned in an area where few, if any, molten droplets of debris (30) are emitted. |
