发明名称 |
METHOD FOR FABRICATING DEIS STRUCTURE BETWEEN TWO POLYSILICON GATE ELECTRODES AND MEMORIES RESULTING THEREFROM |
摘要 |
A process for placing non-continuous Dual Electron Injection Structures (DEIS) between two layers of polysilicon used to form an array of poly devices on an integrated circuit substrate. Separate masks are used to define Poly 1 and Poly 2 devices, respectively. The DEIS structure is disposed above the poly 1 devices. A silicon nitride (Si3N4) layer is used to mask the DEIS structure and prevents it from oxidizing during certain processing steps. A thin layer of poly x is placed between the DEIS structure and the Si3N4. The poly x layer forms a buffer and protects the DEIS during an etching step which removes the Si3N4 layer. |
申请公布号 |
DE3379132(D1) |
申请公布日期 |
1989.03.09 |
申请号 |
DE19833379132 |
申请日期 |
1983.12.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOEG, ANTHONY JOHN, JR.;KROLL, CHARLES THOMAS;STEPHENS, GEOFFREY BROWNELL |
分类号 |
H01L27/112;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/28;H01L29/60 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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