| 摘要 |
<p>A Schottky diode comprises a gallium arsenide substrate (5) on which an epitaxial monocrystalline layer of gallium arsenide (6) is applied. In order to form a Schottky contact, an epitaxial monocrystalline layer of erbium arsenide or ytterbium arsenide (7) is applied to this layer. A covering layer of highly doped gallium arsenide (8) is then applied.</p> |
