| 摘要 |
PURPOSE:To form a resist pattern having satisfactory aspect ratio by carrying out a radiant ray exposure which causes selective accumulation of energy on near a substrate surface at a lower layer of a resist film in addn. to a desired pattern exposure stage using far ultraviolet rays. CONSTITUTION:A latent image of a desired pattern is formed intensely on near the surface in the depth direction of a resist film having high absorption of light in a far ultraviolet ray region, when the film is exposed to far ultraviolet rays through a desired film pattern. Before or after carrying out said exposure, the lower layer in the direction of the resist film including the exposed region is exposed through the desired pattern uniformly to active ray exposure which causes selective accumulation of energy. Thus, sufficient chemical change necessary for compensating insufficient exposure caused by the far ultraviolet rays can be caused in a lower layer of the resist contg. a latent image of a desired pattern. When obtd. exposed image is developed, The lower layer part of the latent image is brought to a same condition as the part where sufficient exposure to far ultraviolet rays has been carried out, so a resist pattern having a satisfactory aspect ratio is obtd. |
