| 发明名称 |
SCHOTTKY DIODE |
| 摘要 |
A Schottky diode comprises a gallium arsenide substrate (5) on which an epitaxial monocrystalline layer of gallium arsenide (6) is applied. In order to form a Schottky contact, an epitaxial monocrystalline layer of erbium arsenide or ytterbium arsenide (7) is applied to this layer. A covering layer of highly doped gallium arsenide (8) is then applied. |
| 申请公布号 |
WO8902162(A1) |
申请公布日期 |
1989.03.09 |
| 申请号 |
WO1988DE00487 |
申请日期 |
1988.08.06 |
| 申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAND |
发明人 |
SMITH, ROBIN;WENNEKERS, PETER |
| 分类号 |
H01L31/10;H01L29/47;H01L29/861;H01L29/872;(IPC1-7):H01L29/91 |
主分类号 |
H01L31/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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