| 摘要 |
Method and apparatus for the in-situ generation of volatile compounds within the process piping of a CVD system. A source of molecules is located upstream from a solid material which is desired to be deposited within a reactor chamber of the system. The molecules are acted upon by a disassociation means, such as a pyrolytic, plasma discharge, or radiation means, to form highly reactive free radicals. These free radicals are fragments of molecules containing unpaired electrons. In accordance with the invention, these highly reactive radicals are generated near the solid source material in a gas stream which transports the radicals to the solid material before the radicals recombine with one another to form unreactive molecules. The free radicals react with the solid source material to form volatile compounds, such as organometallic compounds, which are subsequently conveyed to the reaction chamber of the system for deposition therein. |
