| 摘要 |
PURPOSE:To obtain a photosensitive body enhanced in transferability of carriers, not reduced in that in the case of enlarging film thickness and not shortened in life and good in acceptance potential by using superlattice structure formed by laminating thin films different in optical band gap from each other for a barrier layer. CONSTITUTION:The electrophotographic sensitive body formed by laminating on a conductive substrate 1 the barrier layer 2 and a photoconductive layer 3, and the barrier layer 2 is formed by alternately laminating amorphous silicon thin films containing at least one of C, O and N, and thin semiconductor films composed essentially of silicon and at least one part of each layer microcrystallized in a crystallization degree changed in the layer thickness direction in each layer, thus permitting carriers generated in this region to be extended in life and enhanced in transferability by the superlattice structure of the barrier layer 2, and consequently, the electrophotographic sensitive body to be remarkably enhanced in sensitivity. |
