| 摘要 |
PURPOSE:To have sufficient film thickness and to improve manufacture effectiveness with the merits of each CVD method made the most by composing the captioned material with a first superconductive layer belonging to a specific system and formed by a chemical evaporation method, and a second superconductive layer belonging to a specific system and is formed by the molecular beam epitaxy method on the first layer. CONSTITUTION:A high temperature superconductive layer 2 belonging to an oxide system and having two-layer structure is formed on a substrate 1 surface. A first superconductive layer 2a is formed by using a CVD device in the first process, and a second superconductive layer 2b is formed by using a molecular beam epitaxy device in the second process. The first process is conducted in the atmosphere where an alkoxide compound etc., including individual elements composing an oxide superconductor, is made to gaseous phase. The following gas is used as carrier gas: oxygen gas or mixed gas etc., of oxygen gas, gas of periodic table VIb group elements such as S and Se etc., and gas of periodic table VIIb group elements such as F, Cl, and Br etc. A conductor of A-B-C-D system is used as an oxide superconductor, for instance, in the case of an oxide superconductor belonging to a Y-Ba-Cu-O system, the formula of Y:Ba:Cu:O=1:2:3:(7-delta) is applied, and delta is made to have the range of 0<=delta<=5. |
