| 摘要 |
PURPOSE:To reduce dimensional shift of a negative photoresist pattern by exposing a photoresist film coated flatly on a substrate through a pattern, removing a specified thickness of the photoresist film from the upper surface of the film, and forming a resist pattern with a developing soln. CONSTITUTION:A negative photoresist film is coated flatly on a substrate, and the photoresist film is exposed by irradiating with ultraviolet rays or visible rays through a certain optical system to a pattern. A specified thickness of the photoresist film is removed from the upper surface of the resist film, and a resist pattern is formed with a developing soln. Since the photoresist film is insolubilized down to a deep part of the film in a light region of high light intensity, but only a part near the surface is insolubilized in the shadow region of low light intensity, the insolubilized part of the shadow region is removed leaving the insolubilized part of the light region, if a specified thickness of the film is removed from the surface of the resist after pattern exposure. Thus, a cause for generating dimensional shift is eliminated. |
