| 摘要 |
PURPOSE:To dissolve the stress between a base body and an electrode and to increase the strength of the electrode, by adding a shrinkage agent to a gas- sensitive metallic oxide semiconductor and sintering said semicondutor to obtain the base body and then adding a material for making into conductor to the base body to form the electrode. CONSTITUTION:The shrinkage agent is added to the metallic oxide semiconductor for press forming. The formed body 1 is dried, the temp. is raised at a constant temp. raising rate to heat and calcine it in air. Then valency controlling impurity or the material for making into condutor of noble metal is printed and impregnated as an aqueous solution of chloride from the circumference surface of the body 1. By this process, the valency controlling impurity such as Sb2O3 and noble metal fine powder such as Pt are accumulated at opening pores of the body 1. Then the body 1 is reheated to diffuse the valency controlling impurity into the semiconductor crystal and to half melt the noble metal fine powder, electrodes 2, 3 are formed, and the other part of the body 1 is used as the base body 4. A metallic oxide semiconductor of the same kind as the base body is filled at a recessed part 5 of the top of the body 4 to form a gas-sensitive part 6. |
