PROCESS FOR SELECTIVE PHYSICAL VAPOUR DEPOSITION

摘要

The invention relates to a dry method for depositing a material (10) on a substrate (12) having nucleating sites for the metal which comprises deposition of a material (from source 11) in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods (cablation energy source 13) for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively (by mask 14) prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metalize such as organic polymers or ceramics.