| 发明名称 |
Transistor. |
| 摘要 |
<p>A transistor (10) is described in which the base region (14) comprises a submonolayer of essentially only dopant atoms. One embodiment is a GaAs/AlGaAs heterojunction bipolar transistor in which the base region comprises a submonolayer of Be atoms. The effective base transit time is negligible in these transistors.</p> |
| 申请公布号 |
EP0306258(A2) |
申请公布日期 |
1989.03.08 |
| 申请号 |
EP19880308002 |
申请日期 |
1988.08.30 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
LUNARDI, LEDA M.;MALIK, ROGER J. |
| 分类号 |
H01L29/205;H01L21/331;H01L29/10;H01L29/36;H01L29/73;H01L29/737 |
主分类号 |
H01L29/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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