| 发明名称 |
Method for doping a semiconductor integrated circuit. |
| 摘要 |
<p>A semiconductor device of the present invention is manufactured by subjecting a semiconductor structure to an annealing process to allow an impurity to be diffused from a boron-bearing metal thin film. It is thus possible to shallowly and uniformly form a diffusion layer whose impurity concentration level is made high and uniform.</p> |
| 申请公布号 |
EP0305977(A2) |
申请公布日期 |
1989.03.08 |
| 申请号 |
EP19880114150 |
申请日期 |
1988.08.30 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KINUGAWA,MASAAKI C/O PATENT DIVISION |
| 分类号 |
H01L21/033;H01L21/225;H01L21/336;H01L21/822;H01L21/8234;H01L21/8242;H01L27/04;H01L27/088;H01L27/10;H01L27/108;H01L29/78 |
主分类号 |
H01L21/033 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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