Semiconductor laser devices.

摘要

A semiconductor laser device comprises a p-type semiconductor substrate (11) and a multi-layered crystal structure with an active layer (14) for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate (11) and having a striped channel region (100) through which current is supplied to the active layer and a light-absorbing region positioned outside of the channeled region by which a difference between the amount of light to be absorbed inside of the channeled region and the amount of light to be absorbed outside of the channeled region is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the light-absorbing region is constituted by an n-type semiconductor substance, but a portion of the n-type semiconductor substance positioned in the vicinity of at least one of both facets is replaced by a p-type semiconductor substance (31, 111).