| 摘要 |
PURPOSE:To largely reduce an area without decreasing the performances of elements and to improve the density of the elements by forming the gates of transistors for forming a static RAM through a gate oxide film on the side faces of a groove formed on the surface of a semiconductor substrate. CONSTITUTION:N<+> type diffused layers 4, 5a, 6a, 6b are respectively formed on the bottoms of a groove formed on the surface of a P-type silicon substrate 1 and the surface of a protrusion with 2X10<16>cm<-3> of impurity density. The diffused layers 4, 5a, 6a, 6b are partitioned by a P<+> type channel stopper 2 and a field oxide film 3 of approx. 5000Angstrom . Gates 9a, 9b made of a polycrystalline silicon layer and word lines 10a, 10b are formed through a gate insulating film on the side faces of the groove. The layers 4, 5a, 6a, 6b are formed by ion implanting under the conditions of 1X10<16>cm<-2> of dose of As. Thus, the area is largely reduced without reducing the performance of an element, and the density of the elements is improved. |
