| 摘要 |
PURPOSE:To obtain the titled high-purity fine powder with enhanced productivity, free from sticking to the reaction tube wall, by reaction of an organosilicon compound of specific structure with a carrier gas consisting chiefly of H2 followed by heat treatment of the resulting powder. CONSTITUTION:An organosilicon compound of structural formula R-SiHnX3-n (R is CH3 or C2H5; X is Cl; n is 1 or 2) (e.g. CH3SiHCl2) is incorporated into a carrier gas with a H2 content of >=95wt.% followed by introduction into a reaction tube with its center temperature kept at 800-1,200 deg.C to carry out a gaseous phase chemical reaction. The resultant powder is heat-treated at 1,200-2,200 deg.C under normal pressure in a nonoxidative atmosphere (e.g. Ar), thus obtaining the objective fine powder. |
